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| MMBT6589T1 High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications Features http://onsemi.com * Pb-Free Package is Available MAXIMUM RATINGS (TA = 25C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Collector Current - Peak Electrostatic Discharge Symbol VCEO VCBO VEBO IC ICM ESD Max -30 -50 -5.0 -1.0 -2.0 Unit Vdc Vdc Vdc Adc A 30 VOLTS, 2.0 AMPS PNP TRANSISTOR COLLECTOR 1, 2, 5 3 BASE 6 EMITTER 3 4 HBM Class 3 MM Class C 2 1 5 6 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Total Device Dissipation TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Total Device Dissipation (Single Pulse < 10 s) Junction and Storage Temperature Range Symbol PD (Note 1) RqJA (Note 1) PD (Note 2) RqJA (Note 2) PDsingle (Note 2) (Note 3) TJ, Tstg Max 540 4.4 230 925 7.4 135 1.3 Unit mW mW/C C/W mW mW/C C/W 1 W TSOP-6 CASE 318G STYLE 7 MARKING DIAGRAM G3 M G G -55 to +150 C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR-4 @ Minimum Pad 2. FR-4 @ 1.0 X 1.0 inch Pad 3. ref: Figure 8 G3 = Specific Device Code M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device MMBT6589T1 MMBT6589T1G Package TSOP-6 TSOP-6 (Pb-Free) Shipping 3000/Tape & Reel 3000/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2006 1 January, 2006 - Rev. 1 Publication Order Number: MMBT6589T1/D MMBT6589T1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (IC = -10 mAdc, IB = 0) Collector -Base Breakdown Voltage (IC = -0.1 mAdc, IE = 0) Emitter -Base Breakdown Voltage (IE = -0.1 mAdc, IC = 0) Collector Cutoff Current (VCB = -30 Vdc, IE = 0) Collector-Emitter Cutoff Current (VCES = -30 Vdc) Emitter Cutoff Current (VEB = -4.0 Vdc) ON CHARACTERISTICS DC Current Gain (Note 4) (Figure 1) (IC = -1.0 mA, VCE = -2.0 V) (IC = -500 mA, VCE = -2.0 V) (IC = -1.0 A, VCE = -2.0 V) (IC = 2.0 A, VCE = -2.0 V) Collector -Emitter Saturation Voltage (Note 4) (Figure 3) (IC = -0.5 A, IB = -0.05 A) (IC = -1.0 A, IB = 0.1 A) (IC = -2.0 A, IB = -0.2 A) Base -Emitter Saturation Voltage (Note 4) (Figure 2) (IC = -1.0 A, IB = -0.1 A) Base -Emitter Turn-on Voltage (Note 4) (IC = -1.0 A, VCE = -2.0 V) Cutoff Frequency (IC = -100 mA, VCE = -5.0 V, f = 100 MHz) Output Capacitance (VCB = -5.0 V, f = 1.0 MHz) 4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2% hFE 100 100 80 40 VCE(sat) - - - VBE(sat) - VBE(on) - fT 100 Cobo - - 20 pF -1.1 MHz -1.2 V -0.25 -0.30 -0.65 V - 300 - - V V(BR)CEO -30 V(BR)CBO -50 V(BR)EBO -5.0 ICBO - ICES - IEBO - -0.1 -0.1 mAdc -0.1 mAdc - mAdc - Vdc - Vdc Vdc Symbol Min Max Unit http://onsemi.com 2 MMBT6589T1 200 VCE = -2.0 V h FE , DC CURRENT GAIN h FE , DC CURRENT GAIN 150 230 210 190 170 150 130 110 90 70 0 0.001 0.01 0.1 1.0 10 50 1.0 10 -55C 25C 125C VCE = -1.0 V 100 50 100 1000 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain versus Collector Current 1.0 VBE(sat) , BASE EMITTER SATURATION VOLTAGE (VOLTS) 0.9 0.8 V, VOLTAGE (VOLTS) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 1.0 10 VCE(sat) 100 1000 VBE(sat) VBE(on) 1.0 0.95 0.9 0.85 0.8 0.75 0.7 0.65 0.6 0.55 0.5 Figure 2. DC Current Gain versus Collector Current IC/IB = 10 IC/IB = 100 0.001 0.01 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (AMPS) Figure 3. "On" Voltages Figure 4. Base Emitter Saturation Voltage versus Collector Current 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1.0 10 IC/IB = 10 IC/IB = 100 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 0.8 0.6 1000 mA 0.4 100 mA 0.2 10 mA 0 0.01 50 mA 0.1 1.0 10 100 1000 IB, BASE CURRENT (mA) VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (VOLTS) 1.0 IC, COLLECTOR CURRENT (AMPS) Figure 5. Collector Emitter Saturation Voltage versus Collector Current Figure 6. Collector Emitter Saturation Voltage versus Collector Current http://onsemi.com 3 MMBT6589T1 10 IC , COLLECTOR CURRENT (AMPS) 1 s 100 ms 10 ms 1.0 DC 0.1 1 ms 100 ms 0.01 SINGLE PULSE AT Tamb = 25C 0.1 1.0 10 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 Figure 7. Safe Operating Area r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE 1.0 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 t, TIME (sec) 1.0 10 100 1000 Figure 8. Normalized Thermal Response http://onsemi.com 4 MMBT6589T1 PACKAGE DIMENSIONS TSOP-6 CASE 318G-02 ISSUE P D 6 5 1 2 4 3 HE E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.38 0.50 0.18 0.26 3.00 3.10 1.50 1.70 0.95 1.05 0.40 0.60 2.75 3.00 10 - INCHES NOM 0.039 0.002 0.014 0.007 0.118 0.059 0.037 0.016 0.108 - b e q 0.05 (0.002) A1 A L c DIM A A1 b c D E e L HE q MIN 0.90 0.01 0.25 0.10 2.90 1.30 0.85 0.20 2.50 0 MIN 0.035 0.001 0.010 0.004 0.114 0.051 0.034 0.008 0.099 0 MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 10 STYLE 7: PIN 1. COLLECTOR 2. COLLECTOR 3. BASE 4. N/C 5. COLLECTOR 6. EMITTER SOLDERING FOOTPRINT* 2.4 0.094 1.9 0.075 0.95 0.037 0.95 0.037 0.7 0.028 1.0 0.039 SCALE 10:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 5 MMBT6589T1/D |
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